Insulated Gate Bipolar Transistor IGBT: Theory and Design

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Автор: Vinod Kumar Khanna

Название: Insulated Gate Bipolar Transistor IGBT: Theory and Design

Издательство: WileyBlackwell

Год: 2003

Кол-во страниц: 648

Формат: Pdf

Размер: 27 MB

Язык: Английский

Insulated Gate Bipolar Transistors (IGBT): Theory and Design covers basic theory and design aspects of IGBTs, including the selection of silicon, achieving targeted specifications through device and process design, and device packaging. After laying the groundwork in MOS and bipolar disciplines, the author constructs the foundation of power device physics necessary for clearly understanding the subject matter, including chapters on:

* Non-punchthrough, punchthrough, vertical double diffused MOSFET and trench-gate IGBTs; improved lateral and novel IGBT structures; and emerging technologies

* Steady-state and dynamic operation, and soft switching performance; safe operating area and reliability tests of IGBT

* IGBT physics, device and circuit models

* IGBT unit cell design and latching suppression techniques

* IGBT fabrication steps and process design

* IGBT power modules