Properties and Applications of Silicon Carbide

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Автор: Gerhardt R.

Название: Properties and Applications of Silicon Carbide

Издательство: InTech

Год: 2011

Формат: PDF

Размер: 44 Мб

Язык: Английский

Страниц: 546

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Silicon carbide (SiC) is an interesting material that has found application in a variety of industries. The two best known applications of this material are its use as an abrasive material and its more recent use as a wide band gap semiconductor for high power, high temperature electronic devices. The high hardness of this material, known for many years, led to its use in machining tools and in other structural applications. Usage of SiC in semiconductor devices only became possible in the last twenty years, when commercially available SiC single crystals became available. Thin films and nanoparticles of SiC are still rare, but monolithic SiC and composites containing SiC have been available much longer. One of the challenges of working with this material is that it can crystallize into many different polymorphs, the most common being the 3C (β-SiC), and the hexagonal (α-SiC): 2H, 4H and 6H phases. Because of its high melting point, achieving reasonable bulk densities in polycrystalline materials is difficult. In addition, the semiconducting material forms Schottky barriers with most metals, while the formation of its native oxide, SiO2, can pose additional issues when used in oxidizing atmospheres. However, the scientific community has shown ingenuity in turning some of the pitfalls into decided advantages for a variety of applications.