Introduction to RF Power Amplifier Design and Simulation

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Название: Introduction to RF Power Amplifier Design and Simulation

Автор: Abdullah E.

Издательство: CRC Press

Год: 2016

Страниц: 450

ISBN: 978-1-4822-3165-6, 1482231654

Формат: PDF

Размер: 20 Мб

Язык: English

Introduction to RF Power Amplifier Design and Simulation fills a gap in the existing literature by providing step-by-step guidance for the design of radio frequency (RF) power amplifiers, from analytical formulation to simulation, implementation, and measurement. Featuring numerous illustrations and examples of real-world engineering applications, this book:

Gives an overview of intermodulation and elaborates on the difference between linear and nonlinear amplifiers

Describes the high-frequency model and transient characteristics of metal–oxide–semiconductor field-effect transistors

Details active device modeling techniques for transistors and parasitic extraction methods for active devices

Explores network and scattering parameters, resonators, matching networks, and tools such as the Smith chart

Covers power-sensing devices including four-port directional couplers and new types of reflectometers

Presents RF filter designs for power amplifiers as well as application examples of special filter types

Demonstrates the use of computer-aided design (CAD) tools, implementing systematic design techniques

Blending theory with practice, Introduction to RF Power Amplifier Design and Simulation supplies engineers, researchers, and RF/microwave engineering students with a valuable resource for the creation of efficient, better-performing, low-profile, high-power RF amplifiers.

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